Comparative studies of relaxor-ferroelectric Pb0.92La0.08(Zr0.52Ti0.48)O3 thin films deposited by pulsed laser deposition and sol-gel spin coating
نویسندگان
چکیده
In this study, the energy storage properties of relaxor Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) thin films grown on Pt/Si substrates using pulsed laser deposition (PLD) and sol-gel methods were investigated. The PLZT deposited by PLD possessed a columnar growth microstructure mixed orientations (100) (110) while dense preferred orientation achieved deposition. Although electric breakdown strength (EBD) sol-gel-deposited (EBD=2200 kV/cm) was slightly higher than that (EBD=2100 kV/cm), PLD-deposited had larger recoverable density (Ureco) efficiency (η), which can be explained its slimmer polarization loop, maximum polarization, lower remanent polarization. At corresponding EBD values, Ureco η values 33.2 J/cm3 67.5% for 27.5 62.2% films. performance, method remains promising fabrication dielectric applications due to unique advantages low cost, simple preparation process, easy control chemical composition.
منابع مشابه
Effects of Cobalt Doping on Optical Properties of ZnO Thin Films Deposited by Sol–Gel Spin Coating Technique
Cobalt (Co) doped Zinc Oxide (ZnO) thin films, containing different amountof Cobalt nanoparticles as the Co doping source, deposited by the sol–gel spin coatingmethod onto glass via annealing temperature at 400˚C, have been investigated by opticalcharacterization method. The effect of Co incorporation on the surface morphology wasclearly observed from scanning electron microscopy (SEM) images. ...
متن کاملTin-doped indium oxide thin films deposited by sol–gel dip-coating technique
Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...
متن کاملStress effects in sol-gel derived ferroelectric thin films
Residual stress development during processing of sol-gel derived ferroelectric thin films influences electromechanical properties and performance. The present work investigates the effects of stress on field-induced polarization switching in ferroelectric Pb~Zr0.52Ti0.48)O3 ~PZT! ~52/48! thin films. Film response is measured as a function of externally applied mechanical stress using a double-b...
متن کاملPulsed laser deposition of VO2 thin films
High quality vanadium dioxide ~VO2! thin films have been successfully deposited by pulsed laser deposition without postannealing on ~0001! and ~101̄0! sapphire substrates. X-ray diffraction reveals that the films are highly oriented with ~010! planes parallel to the surface of the substrate. VO2 thin films on ~0001! and ~101̄0! substrates show semiconductor to metal transistions with electrical r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Vietnam Journal of Science, Technology and Engineering
سال: 2022
ISSN: ['2525-2461', '2615-9937']
DOI: https://doi.org/10.31276/vjste.64(3).38-43